Process Control In Semiconductor Technology Using Ellipsometry

J. B. Theeten; M. Erman; P. Dimitriou

doi:10.1117/12.931706

30 April 1981 Process Control In Semiconductor Technology Using Ellipsometry

J. B. Theeten, M. Erman, P. Dimitriou

Proceedings Volume 0276, Optical Characterization Techniques for Semiconductor Technology; (1981) https://doi.org/10.1117/12.931706
Event: 1981 Microlithography Conferences, 1981, San Jose, United States

Abstract

The capabilities of automatic ellipsometry are demonstrated for semiconductor technology i.e. thin films processing on optical polished silicon and gallium arsenide wafers. Real-time evaluation of a film deposit is shown in the case of the plasma oxidation of a silicon substrate through a thin film of calcia stabilized Zr0₂ (CSZ). The trajectory in the (ψ , Δ) plane indicates that a Si0₂ layer is developed between CSZ and Si. Structural damages occur in this layer above a critical voltage, corresponding to large deviations of the ellipsometric trajectory. In the cases when in situ examination is not feasible, a non-destructive depth profiling of the thin film can be obtained by varying the energy of the incident light, using a spectroscopic ellipsometer. The Si₃N₄/Si interface is examined on Si₃N₄/Si02/Si structures (the active part of a MNOS device) as well as thermally nitrided silicon wafers. Optical absorption due to uncompletely nitrided Si tetrahedra is found in both cases. Also examined are implanted layers in GaAs. Because the incident ions locally transform the crystalline GaAs into an amorphous state, with a very distinct dielectric function, it is possible to derive from the spectroscopic ellipsometry data a depth profile of the ion induced damages.

Citation Download Citation

J. B. Theeten, M. Erman, and P. Dimitriou "Process Control In Semiconductor Technology Using Ellipsometry", Proc. SPIE 0276, Optical Characterization Techniques for Semiconductor Technology, (30 April 1981); https://doi.org/10.1117/12.931706

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