Terahertz radiation and ultrafast carrier dynamics in semi-insulating GaAs

Li Wang

doi:10.1117/12.2316074

1 September 1996 Terahertz radiation and ultrafast carrier dynamics in semi-insulating GaAs

Li Wang

Proceedings Volume 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology; 2778AP (1996) https://doi.org/10.1117/12.2316074
Event: 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 1996, Taejon, Korea, Republic of

Abstract

Terahertz (THz) far infrared radiation with a subpicosecond pulse duration is generated from an undoped semi-insulating GaAs (100) surface illuminated by femtosecond laser pulses. An anormalous enhancement of the THz emission is observed at room temperature when another pump pulse is used, which is attributed to the mobility increase resulted from carrier trapping by midgap defect levels, such as EL2 deep centers. An electron capture cross section of about 10^-12 cm² is estimated using this model.

Citation Download Citation

Li Wang "Terahertz radiation and ultrafast carrier dynamics in semi-insulating GaAs", Proc. SPIE 2778, 17th Congress of the International Commission for Optics: Optics for Science and New Technology, 2778AP (1 September 1996); https://doi.org/10.1117/12.2316074

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