Thermoelectric properties of high-temperature recrystallized Ge films

Graznya Beensh-Marchwicka; Stanislaw Osadnik; Eugeniusz Prociow

doi:10.1117/12.238158

8 April 1996 Thermoelectric properties of high-temperature recrystallized Ge films

Graznya Beensh-Marchwicka, Stanislaw Osadnik, Eugeniusz Prociow

Proceedings Volume 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications; (1996) https://doi.org/10.1117/12.238158
Event: Metal/Nonmetal Microsystems: Physics, Technology, and Applications, 1995, Polanica Zdroj, Poland

Abstract

The behavior of the magnetron sputtered Ge films under annealing in vacuum at various temperatures up to 1173 K is described. The relation between the dc conductivity and the thermoelectric power versus temperature (300 - 500 K) for films annealed in various conditions is given. The changes in the electrical parameters of films were correlated with data obtained from structural analysis and the optical measurements.

Citation Download Citation

Graznya Beensh-Marchwicka, Stanislaw Osadnik, and Eugeniusz Prociow "Thermoelectric properties of high-temperature recrystallized Ge films", Proc. SPIE 2780, Metal/Nonmetal Microsystems: Physics, Technology, and Applications, (8 April 1996); https://doi.org/10.1117/12.238158

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available