New concept for negative-tone electron-beam resist

Yasumasa Wada; Motofuni Kashiwagi; H. Tanaka; Atsushi Kawata; Kiyoto Tanaka; Yuhichi Yamamoto

doi:10.1117/12.245207

24 July 1996 New concept for negative-tone electron-beam resist

Yasumasa Wada, Motofuni Kashiwagi, H. Tanaka, Atsushi Kawata, Kiyoto Tanaka, Yuhichi Yamamoto

Proceedings Volume 2793, Photomask and X-Ray Mask Technology III; (1996) https://doi.org/10.1117/12.245207
Event: Symposium on Photomask and X-Ray Mask Technology, 1996, Kawasaki City, Japan

Abstract

Negative tone electron beam resist forms pattern with radical crosslinking brought by electron beam irradiation and succeeding chemical reactions resulting radical species. The important problem of current negative tone resist is insufficient pattern profile because of tailing and scum found after development. We have solved these problems with reducing the unnecessary cross linking by loading particular radical captures in resist. This paper presents the technical result of resolution improvement achieved on the ZEN4000 that consists of p-chloromethylstyrene and p-chlorostyrene negative electron beam resist series.

Citation Download Citation

Yasumasa Wada, Motofuni Kashiwagi, H. Tanaka, Atsushi Kawata, Kiyoto Tanaka, and Yuhichi Yamamoto "New concept for negative-tone electron-beam resist", Proc. SPIE 2793, Photomask and X-Ray Mask Technology III, (24 July 1996); https://doi.org/10.1117/12.245207

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