Paper
19 July 1996 CdZnTe x-ray detector for 30- to 100-keV energy
Sung-Shik Yoo, Brian G. Rodricks, Sarvjit D. Shastri, Pedro A. Montano
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Abstract
High-pressure-Bridgman grown CdZnTe x-ray detectors 1.25 approximately 1.7 mm thick were tested using monochromatic x-rays of 30 to 100 keV generated by a high energy x-ray generator. The results were compared with a commercially available 5 cm thick Nal detector. A linear dependence of the counting rate versus the x-ray generator tube current was observed at 58.9 keV. The measured pulse height of the photopeaks shows a linear dependence on energy. Electron and hole mobility-lifetime products were deduced by fitting bias dependent photopeak channel numbers at 30 keV x-ray energy. Values of 2 X 10-3 cm2/V and 2 X 10-4 cm2/V were obtained for (mu) (tau) e and (mu) (tau) p, respectively. The detector efficiency of CdZnTe at a 100 V bias was as high as, or higher than 90 percent compared to a Nal detector. At x-ray energies higher than 70 keV, the detection efficiency becomes a dominant factor and decreases to 75 percent at 100 keV.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sung-Shik Yoo, Brian G. Rodricks, Sarvjit D. Shastri, and Pedro A. Montano "CdZnTe x-ray detector for 30- to 100-keV energy", Proc. SPIE 2859, Hard X-Ray/Gamma-Ray and Neutron Optics, Sensors, and Applications, (19 July 1996); https://doi.org/10.1117/12.245123
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Cited by 3 scholarly publications.
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KEYWORDS
Sensors

X-rays

X-ray detectors

Electrodes

Signal attenuation

Chlorine

Diffraction

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