PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
This paper is concerned with the method of surface charge profiling (SCP) developed for in-line monitoring of front- end processes in semiconductor manufacturing. In this study a commercial SCP system is used to monitor wafer cleans in terms of oxide/hydrogen coverage of Si surfaces following cleaning with emphasis on HF last cleaning sequences. Moreover, metal contamination of bare silicon surfaces and deactivation of boron dopant in the near-surface region of p-type Si wafers are monitored. Finally, the unique capability of SCP in monitoring time-dependent evolution of characteristics of Si surfaces exposed to various ambients is demonstrated.
Jerzy Ruzyllo,P. Roman,J. Staffa,Ismail Kashkoush, andEmil Kamieniecki
"Process monitoring using surface charge profiling (SCP) method", Proc. SPIE 2876, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing II, (13 September 1996); https://doi.org/10.1117/12.250899
ACCESS THE FULL ARTICLE
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
The alert did not successfully save. Please try again later.
Jerzy Ruzyllo, P. Roman, J. Staffa, Ismail Kashkoush, Emil Kamieniecki, "Process monitoring using surface charge profiling (SCP) method," Proc. SPIE 2876, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing II, (13 September 1996); https://doi.org/10.1117/12.250899