Optically pumped intersubband electron Raman lasers

Gregory Sun; Jacob B. Khurgin; Lionel R. Friedman; Richard A. Soref

doi:10.1117/12.251875

24 September 1996 Optically pumped intersubband electron Raman lasers

Gregory Sun, Jacob B. Khurgin, Lionel R. Friedman, Richard A. Soref

Proceedings Volume 2886, Semiconductor Lasers II; (1996) https://doi.org/10.1117/12.251875
Event: Photonics China '96, 1996, Beijing, China

Abstract

A new tunable source of infrared radiation based on intersubband electron Raman scattering in semiconductor quantum wells is theoretically studied. The structure consisting of three levels in two coupled GaAs/AlGaAs quantum wells is optimized for a maximum Raman gain at zero bias. Raman gain as large as 400/cm can be achieved according to our calculations. Lasing wavelengths are tuned by applying external dc bias field along the growth direction. An infrared tuning range of 8 to 12 micrometers , with moderate Raman gain, is predicted as the electric field is varied from -40 to 40 kV/cm.

Citation Download Citation

Gregory Sun, Jacob B. Khurgin, Lionel R. Friedman, and Richard A. Soref "Optically pumped intersubband electron Raman lasers", Proc. SPIE 2886, Semiconductor Lasers II, (24 September 1996); https://doi.org/10.1117/12.251875

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