Paper
25 September 1996 Reflectivities and electronic band structure of Hg0.8Cd0.2Te
Runqing Jiang, Xierong Hu, Jiaxiong Fang, Jie Ma
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Abstract
The fundamental reflectivity spectrum of Hg0.8Cd0.2Te have been investigated. The feature of the spectra is the presence of E1 and E2 peaks with the fundamental absorption region. The lower energy peak can be split into a doublet (E1 and E1 + (Delta) 1). A 3D saddle point is used to fit the E1 and E1 + (Delta) 1 critical point and some simulated calculation is done for E2 at X point. The calculated results are compared with the measured results and prominent features of the dielectric spectra are identified with critical-point transition at the (Lambda) and X points in the Brillouin zone.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Runqing Jiang, Xierong Hu, Jiaxiong Fang, and Jie Ma "Reflectivities and electronic band structure of Hg0.8Cd0.2Te", Proc. SPIE 2894, Detectors, Focal Plane Arrays, and Applications, (25 September 1996); https://doi.org/10.1117/12.252096
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KEYWORDS
Reflectivity

Semiconductors

Dielectrics

Data modeling

Absorption

Crystals

Optical semiconductors

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