Codoped silica-on-silicon waveguides fabricated by PECVD technique

A. M. Fiorello; E. Giannetta; M. Valentino; A. Vannucci; Mauro Varasi

doi:10.1117/12.262436

20 December 1996 Codoped silica-on-silicon waveguides fabricated by PECVD technique

A. M. Fiorello, E. Giannetta, M. Valentino, A. Vannucci, Mauro Varasi

Proceedings Volume 2954, Fiber Integrated Optics; (1996) https://doi.org/10.1117/12.262436
Event: Advanced Imaging and Network Technologies, 1996, Berlin, Germany

Abstract

Silica-on-silicon waveguides have been fabricated doping core layer with phosphorus and germanium. Plasma Enhanced Chemical Vapor Deposition has been used to grow all layers starting from liquid metalorganic compounds. Co-doping assures chemical (Ge) and geometrical (P) homogeneity with optical fibers and allows to propagation losses of 1 dB/cm (not reflowed samples). Low cost, high realization rate and process compatibility with other microelectronic components make this technology very attractive for industrial production.

Citation Download Citation

A. M. Fiorello, E. Giannetta, M. Valentino, A. Vannucci, and Mauro Varasi "Codoped silica-on-silicon waveguides fabricated by PECVD technique", Proc. SPIE 2954, Fiber Integrated Optics, (20 December 1996); https://doi.org/10.1117/12.262436

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