Photoconductivity formation in CdTe in the annealing process

Jaan Hiie; Vello Valdna; Enn Mellikov; Mare Altosaar

doi:10.1117/12.266820

6 February 1997 Photoconductivity formation in CdTe in the annealing process

Jaan Hiie, Vello Valdna, Enn Mellikov, Mare Altosaar

Proceedings Volume 2968, Optical Organic and Semiconductor Inorganic Materials; (1997) https://doi.org/10.1117/12.266820
Event: International Conference on Advanced Optical Materials and Devices, 1996, Riga, Latvia

Abstract

Results on the influence of annealing in vacuum and in Te vapors to the dark and light resistance's (R_D and R_L) of CdTe:Cl miniature crystals (300 - 400 micrometer) of monograin powders is reported and discussed. The dark to light resistance ratio 10⁵ (R_D equals 10¹¹ (Omega) ) at incandescent light intensity of 10⁴ 1x at room temperature have been obtained for 400 micrometer size CdTe:Cl round-shape monograins. Process of annealing was found to shrink the porous structure of as-grown CdTe monograins and to smooth the crystal surfaces.

Citation Download Citation

Jaan Hiie, Vello Valdna, Enn Mellikov, and Mare Altosaar "Photoconductivity formation in CdTe in the annealing process", Proc. SPIE 2968, Optical Organic and Semiconductor Inorganic Materials, (6 February 1997); https://doi.org/10.1117/12.266820

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