XPS study of laser-assisted etching of InP in a chlorine atmosphere

Jerzy M. Wrobel; Christopher E. Moffitt; David M. Wieliczka; Jan J. Dubowski

doi:10.1117/12.273743

9 May 1997 XPS study of laser-assisted etching of InP in a chlorine atmosphere

Jerzy M. Wrobel, Christopher E. Moffitt, David M. Wieliczka, Jan J. Dubowski

Proceedings Volume 2991, Laser Applications in Microelectronic and Optoelectronic Manufacturing II; (1997) https://doi.org/10.1117/12.273743
Event: Photonics West '97, 1997, San Jose, CA, United States

Abstract

Laser assisted dry etching ablation of (001) InP wafers in a chlorine atmosphere is studied with spatially resolved x-ray photoelectron spectroscopy (XPS). The etching was carried out in a low pressure mixture of chlorine and helium (10% Cl₂ in He). The wafers were exposed to 308 nm pulsed XeCl excimer laser radiation with several values of fluence near the ablation threshold of InP. It was found that, at room temperature, the applied etch mixture does not spontaneously react with the wafer. It was also found that laser irradiation at a fluence less than the ablation threshold of InP stimulates a chemical reaction between the chlorine and the wafer, forming In-Cl compounds. At the same time, the irradiation removes the reaction products.

Citation Download Citation

Jerzy M. Wrobel, Christopher E. Moffitt, David M. Wieliczka, and Jan J. Dubowski "XPS study of laser-assisted etching of InP in a chlorine atmosphere", Proc. SPIE 2991, Laser Applications in Microelectronic and Optoelectronic Manufacturing II, (9 May 1997); https://doi.org/10.1117/12.273743

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