Paper
23 January 1997 Transient temperature behavior of GaAlAs/GaAs high-power laser arrays on different heat sinks
Roland Puchert, M. Voss, Ch. Lier, A. Baerwolff
Author Affiliations +
Abstract
Diode laser parameters such as emission wavelength, threshold current and optical output power, sensitively depend on the junction temperature of the laser diode. The temperature in the active layer results from the loss processes inside the laser structure as well as from the thermal characteristics of the semiconductor material and the heat sink configuration. In this paper, we present numerical model calculations employing a two dimensional finite element method in order to study the transient temperature behavior of high power laser arrays in a time range between 10 ns and cw-operation. Furthermore, we investigated the influence of different heat sinks on the thermal performance of whole device. Numerical and experimental results are compared.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Roland Puchert, M. Voss, Ch. Lier, and A. Baerwolff "Transient temperature behavior of GaAlAs/GaAs high-power laser arrays on different heat sinks", Proc. SPIE 2997, Integrated Optics Devices: Potential for Commercialization, (23 January 1997); https://doi.org/10.1117/12.264167
Lens.org Logo
CITATIONS
Cited by 4 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Finite element methods

Semiconductor lasers

Copper

Thermal modeling

High power lasers

Silicon

Diamond

Back to Top