Paper
7 July 1997 Laser removal of deep submicron-patterned photoresist after RIE of polysilicon, contacts, and vias
Menachem Genut, Ofer Tehar-Zahav, Eli Iskevitch, Boris Livshits
Author Affiliations +
Abstract
Removal of tough compounds, which are formed during reactive ion etch (RIE) of polysilicon, contacts and vias, is one of the challenges in deep submicron patterned photoresist stripping. A novel UV-excimer laser photoresist stripping method proposed here allows the removal of these hard and mainly inorganic species, usually situated on sidewalls, in one dry step.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Menachem Genut, Ofer Tehar-Zahav, Eli Iskevitch, and Boris Livshits "Laser removal of deep submicron-patterned photoresist after RIE of polysilicon, contacts, and vias", Proc. SPIE 3049, Advances in Resist Technology and Processing XIV, (7 July 1997); https://doi.org/10.1117/12.275872
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photoresist materials

Etching

Chemical lasers

Reactive ion etching

Excimer lasers

Laser processing

Halogens

RELATED CONTENT


Back to Top