Paper
7 July 1997 Topography description model for 3D exposure simulation
Mumit Khan, Srinivas B. Bollepalli, Franco Cerrina
Author Affiliations +
Abstract
The problem of accurately describing the topography of a mask arose in x-ray lithography, when the absorber structures have dimensions of several hundred wavelengths and may have topography. However, the application of phase shifting structures and a refinement of the image formation calculation even in optical masks has recently raised the same issue for the case of optical lithography. This paper reports the design and implementation of Topography Description Model (TDM), a rule-based 3D topography generator that allows the user to describe the exposure system, such as a system comprising of mask, gap, resist and wafer. The paper illustrates some applications of TDM to real-world studies, such as studying the effect of absorber side-wall slope on the final image and optimizing XRL masks.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mumit Khan, Srinivas B. Bollepalli, and Franco Cerrina "Topography description model for 3D exposure simulation", Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); https://doi.org/10.1117/12.276038
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Cited by 1 scholarly publication.
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KEYWORDS
3D modeling

Photomasks

Rule based systems

Time division multiplexing

Image acquisition

Optical lithography

Phase shifting

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