Paper
20 February 1998 Crystalline and electrical properties of SrBi2Ta2O9 thin films prepared by laser ablation
Yoshihiro Oishi, Yoshinori Matsumuro, Masanori Okuyama
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Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300688
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China
Abstract
SrBi2Ta2O9 thin films are prepared on Pt sheets by the laser ablation method using an ArF excimer laser below 560 degrees Celsius. Crystallographic properties of the film are characterized as parameters of substrate temperature, O2 or N2O gas pressure and laser repetition frequency. SrBi2Ta2O9 thin films are oriented preferentially to (105) on Pt sheets. The depth profile of x-ray photoelectron spectra (XPS) reveals a homogeneous composition and XPS signals of Bi suggest oxygen deficiency of the film on Pt sheet. The films deposited on Pt sheet consist of spherical grains of about 100 nm diameter. D-E hysteresis loops is observed at SrBi2Ta2O9 thin film deposited on Pt sheet. The remanent polarization was 2.5 (mu) C/cm2 and coercive force was 34 kV/cm.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshihiro Oishi, Yoshinori Matsumuro, and Masanori Okuyama "Crystalline and electrical properties of SrBi2Ta2O9 thin films prepared by laser ablation", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); https://doi.org/10.1117/12.300688
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KEYWORDS
Thin films

Platinum

Crystals

Laser ablation

Laser crystals

Tantalum

Gas lasers

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