Electrical transport properties of a diode consisting of hydrogenated nanocrystalline silicon film

Ming Liu; Hongfei Dou; Yuliang L. He; Xinliu Jiang

doi:10.1117/12.300690

20 February 1998 Electrical transport properties of a diode consisting of hydrogenated nanocrystalline silicon film

Ming Liu, Hongfei Dou, Yuliang L. He, Xinliu Jiang

Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300690
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China

Abstract

The diode consisting of nano-silicon quantum dots embedded in an amorphous silicon matrix is fabricated. The discontinuous staircases on its I-V curves are observed. There are two distinct regimes on I-V curves of diode: (1) the sequential tunneling regime, where current increases monotonously with increased negative bias; (2) the resonant tunneling regime, where the current increases dramatically with increased negative bias and three quantum staircases appear. The qualitative explanation of this physical phenomenon is proposed.

Citation Download Citation

Ming Liu, Hongfei Dou, Yuliang L. He, and Xinliu Jiang "Electrical transport properties of a diode consisting of hydrogenated nanocrystalline silicon film", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); https://doi.org/10.1117/12.300690

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