Ion implantation in dielectric thin films for passive and active components

Francois Flory; Laurent Roux; Stephane Tisserand; Herve Rigneault; Stephanie Robert; G. Mathieu

doi:10.1117/12.300659

20 February 1998 Ion implantation in dielectric thin films for passive and active components

Francois Flory, Laurent Roux, Stephane Tisserand, Herve Rigneault, Stephanie Robert, G. Mathieu

Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300659
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China

Abstract

The consequences of Ti implantation in silica glasses and Ta₂O₅ layer are studied. It is shown that the optical losses can be low with a variation of the refractive index which can be well controlled. Results on rectangular waveguides and Y junctions are given. Erbium implanted Ta₂O₅ layers exhibit a luminescent behavior both in the green and in the infra-red. The emission diagram of the coating can be controlled with a multilayer structure.

Citation Download Citation

Francois Flory, Laurent Roux, Stephane Tisserand, Herve Rigneault, Stephanie Robert, and G. Mathieu "Ion implantation in dielectric thin films for passive and active components", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); https://doi.org/10.1117/12.300659

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