Paper
20 February 1998 Preparation and characterization of the quantum dot quantum well system CdS/CuS/CdS
Hongming Chen, Xinfan Huang, Hong-Bin Huang, Ling Xu, Jun Xu, Kun-Ji Chen, Duan Feng
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Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300681
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China
Abstract
The synthesis and the characterization of the quantum dot quantum well (QDQW) system are described. The chemical synthesis and substitution method are used to synthesize the three-layered structure compound CdS/CuS/CdS which consists of a core of the CdS nanocrystal and a well of monolayers of CuS capped by monolayers of CdS acting as the outermost shell. The results of inductive coupled plasma mass spectroscopy (ICP-MS) measurement and the absorption spectra confirm the formation of the three-layered system CdS/CuS/CdS.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hongming Chen, Xinfan Huang, Hong-Bin Huang, Ling Xu, Jun Xu, Kun-Ji Chen, and Duan Feng "Preparation and characterization of the quantum dot quantum well system CdS/CuS/CdS", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); https://doi.org/10.1117/12.300681
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KEYWORDS
Quantum dots

Quantum wells

Cadmium sulfide

Absorption

Copper

Mass spectrometry

Nanocrystals

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