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20 February 1998 Stimulated emission under photopumping in ZnSe-based MQWs grown by AP-MOCVD
Xiwu Fan, Z. P. Guan, De Zen Shen, Jiying Zhang, Zhuhong Zheng, Baojun Yang
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Proceedings Volume 3175, Third International Conference on Thin Film Physics and Applications; (1998) https://doi.org/10.1117/12.300672
Event: Third International Conference on Thin Film Physics and Applications, 1997, Shanghai, China
Abstract
Blue-green and blue stimulated emission under photopumping in Zn0.8Cd0.2Se-ZnSe and ZnSe-ZnS multiple quantum wells (MQWs) on (100) GaAs substrate grown by atmospheric pressure metalorganic chemical vapor deposition (AP-MOCVD) have been investigated, respectively. For the Zn0.8Cd0.2Se-ZnSe MQWs, the stimulated emission of the sample with different cavity length is observed at 77K, two groups of stimulated emission lines observed are attributed to n equals 1 heavy- hole (hh) and light-hole (lh) exciton transition, respectively, and it is noticed that the sample with the shorter Fabry-Perot cavity length has the larger threshold excitation and more mode spacing. For the ZnSe-ZnS MQWs, the blue stimulated emission is observed and attributed to the exciton-exciton interactions.
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Xiwu Fan, Z. P. Guan, De Zen Shen, Jiying Zhang, Zhuhong Zheng, and Baojun Yang "Stimulated emission under photopumping in ZnSe-based MQWs grown by AP-MOCVD", Proc. SPIE 3175, Third International Conference on Thin Film Physics and Applications, (20 February 1998); https://doi.org/10.1117/12.300672
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KEYWORDS
Cadmium
Zinc
Excitons
Fabry–Perot interferometers
Gallium arsenide
Metalorganic chemical vapor deposition
Quantum wells
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