Photoluminescence of GaAs grown by liquid phase epitaxy from Bi solution

Mariusz Ciorga; Leszek Bryja; Jan Misiewicz; Regina Paszkiewicz; Marek Panek; Bogdan Paszkiewicz; Marek J. Tlaczala

doi:10.1117/12.276208

13 June 1997 Photoluminescence of GaAs grown by liquid phase epitaxy from Bi solution

Mariusz Ciorga, Leszek Bryja, Jan Misiewicz, Regina Paszkiewicz, Marek Panek, Bogdan Paszkiewicz, Marek J. Tlaczala

Proceedings Volume 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology; (1997) https://doi.org/10.1117/12.276208
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland

Abstract

Thick intentionally undoped GaAs epitaxial layers grown by LPE from Ga-Bi solution with different contents of Bi in liquid solvent were studied by photoluminescence at temperature T equals 2K. The dependence of photoluminescence spectra on contents of Bi in solution was analyzed.

Citation Download Citation

Mariusz Ciorga, Leszek Bryja, Jan Misiewicz, Regina Paszkiewicz, Marek Panek, Bogdan Paszkiewicz, and Marek J. Tlaczala "Photoluminescence of GaAs grown by liquid phase epitaxy from Bi solution", Proc. SPIE 3179, Solid State Crystals in Optoelectronics and Semiconductor Technology, (13 June 1997); https://doi.org/10.1117/12.276208

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