Paper
26 August 1997 Narrow-gap alloys (Pb,Sr)Se and (Pb,Eu)Se for optoelectronic devices
Klaus H. Herrmann
Author Affiliations +
Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280427
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine
Abstract
(Pb,Sr)Se and (Pb,Eu)Se are semiconductors with sodium chloride structure. They exhibit a direct energy gap which opens very sharply with increasing SeSe or EuSe content in the PbSe matrix. This is of interest for optoelectronic applications in photodetectors, injection lasers as well as for waveguides and cladding layers in quantum well and heterostructures in general. A detailed analysis of the optical, magnetooptical, photoelectric and photoluminescence properties of MBE-grown layers on BaF2 substrates with energy gaps up to 500 meV at temperatures between 10 K and 300 K is given. The discussion is concentrated on the following points: character of the near-to-edge optical transitions, influence of Coulomb interaction on the spectra; dispersion of the refractive index and the enhancement near Eg; differences between (Pb,Sr)Se and the dilute semimagnetic (Pb,Eu)Se; applications in optoelectronic devices.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Klaus H. Herrmann "Narrow-gap alloys (Pb,Sr)Se and (Pb,Eu)Se for optoelectronic devices", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280427
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Cited by 5 scholarly publications.
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KEYWORDS
Optoelectronic devices

Cladding

Heterojunctions

Laser applications

Optoelectronics

Photodetectors

Quantum wells

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