p-to-n ion-beam milling conversion in specially doped CdxHg1-xTe

Igor I. Izhnin; Aleksandr I. Izhnin; K. R. Kurbanov; Bogdan B. Prytuljak

doi:10.1117/12.280463

26 August 1997 p-to-n ion-beam milling conversion in specially doped Cd_xHg_1-xTe

Igor I. Izhnin, Aleksandr I. Izhnin, K. R. Kurbanov, Bogdan B. Prytuljak

Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280463
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine

Abstract

Ion beam milling effect on electrical properties of usual vacancy doped and especially In compensated p-Cd_xHg_1-xTe has been investigated. In all cases after ion beam milling by low energy neutralized. Ar ions n-p structure with thickness of n-layers that depended on initial hole concentration and irradiation dose has been created. It was shown that in the usual vacancy doped Cd_xHg_1-xTe the electron concentration in n-layers well agrees with concentration of residual donors. For the especially doped samples the electron concentration was determined by the In donor impurities' concentration. The possibility of the n-p⁺ Cd_xHg_1-xTe photodiode fabrication with optimum required carriers' concentration both in n- and p-regions has been demonstrated by ion beam milling of the especially doped samples.

Citation Download Citation

Igor I. Izhnin, Aleksandr I. Izhnin, K. R. Kurbanov, and Bogdan B. Prytuljak "p-to-n ion-beam milling conversion in specially doped Cd_xHg_1-xTe", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280463

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