Low-energy BF2, BCl2, and BBr2 implants for ultrashallow P+-N junctions

S. Raghu Nandan; Vikas Agarwal; Sanjay K. Banerjee

doi:10.1117/12.284586

27 August 1997 Low-energy BF₂, BCl₂, and BBr₂ implants for ultrashallow P⁺-N junctions

S. Raghu Nandan, Vikas Agarwal, Sanjay K. Banerjee

Proceedings Volume 3212, Microelectronic Device Technology; (1997) https://doi.org/10.1117/12.284586
Event: Microelectronic Manufacturing, 1997, Austin, TX, United States

Abstract

We have examined low energy BCl₂ and BBr₂ implants as a means of fabricating ultra-shallow P⁺-N junctions. Five keV and 9 keV BCl₂ implants and 18 keV BBr₂ implants have been compared to 5 keV BF₂ implants to study the benefits of using these species. BCl₂ and BBr₂, being heavier species, have a lower projected range and produce more damage. The greater damage restricts channeling, resulting in shallower as-implanted profiles. The increased damage amorphizes the substrate at low implant doses which results in reduced transient enhanced diffusion (TED) during the post-implant anneal. Post-anneal SIMS profiles indicate a junction depth reduction of over 10 nm (at 5 X 10¹⁷ cm^-3 background doping) for 5 keV BCl₂ implants as compared to 5 keV BF₂ implants. Annealed junctions as shallow as 10 nm have been obtained from the 18 keV BBr₂ implants. The increased damage degrades the electrical properties of these junctions by enhancing the leakage current densities. BCl₂ implanted junctions have leakage current densities of approximately 1 (mu) A/cm² as compared to 10 nA/cm² for the BF₂ implants. BBr₂ implants have a lower leakage density of approximately 50 nA/cm². Low energy BBr₂ implants offer an exciting alternative for fabricating low leakage, ultra-shallow P⁺-N junctions.

Citation Download Citation

S. Raghu Nandan, Vikas Agarwal, and Sanjay K. Banerjee "Low-energy BF₂, BCl₂, and BBr₂ implants for ultrashallow P⁺-N junctions", Proc. SPIE 3212, Microelectronic Device Technology, (27 August 1997); https://doi.org/10.1117/12.284586

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