Coherent control of interband transitions in semiconductor heterostructures

Xuedong Hu; Walter Poetz

doi:10.1117/12.306169

23 April 1998 Coherent control of interband transitions in semiconductor heterostructures

Xuedong Hu, Walter Poetz

Proceedings Volume 3277, Ultrafast Phenomena in Semiconductors II; (1998) https://doi.org/10.1117/12.306169
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

Schemes for coherent control of carrier dynamics in semiconductors are investigated theoretically. We consider coherent control of carrier generation and charge oscillations by quantum interference of one- and three-photon absorption, as well as one- and two-photon absorption. It is shown that, for coherent light pulses shorter than characteristic phase breaking times, the relative phase between the two excitation routes can be used to control the extent of charge oscillations in semiconductor double wells. Furthermore, we show that optical gain and absorption can be controlled coherently by two coherent light fields. In particular, optical gain can be shifted from one intersubband transition to another.

Citation Download Citation

Xuedong Hu and Walter Poetz "Coherent control of interband transitions in semiconductor heterostructures", Proc. SPIE 3277, Ultrafast Phenomena in Semiconductors II, (23 April 1998); https://doi.org/10.1117/12.306169

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