Optical transition properties of rare-earth ions in nonfluoride halide glasses

Masanori Shojiya; Kohei Kadono; Masahide Takahashi; Ryoji Kanno; Yoji Kawamoto

doi:10.1117/12.305403

15 April 1998 Optical transition properties of rare-earth ions in nonfluoride halide glasses

Masanori Shojiya, Kohei Kadono, Masahide Takahashi, Ryoji Kanno, Yoji Kawamoto

Proceedings Volume 3280, Rare-Earth-Doped Devices II; (1998) https://doi.org/10.1117/12.305403
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

Optical transition properties of Er³⁺ ions in ZnCl₂-KCl-BaCl₂ glass were studied and were discussed on the comparison with those in the other glass systems, i.e., ZrF₄-based and Ga₂S₃-based glasses. Judd-Ofelt analysis was performed using eight absorption bands of Er³⁺ in the ZnCl₂-based glass. Among the Judd- Ofelt intensity parameters, the (Omega) ₂ was larger than that of the ZrF₄-based glass. This is probably due to the covalency of the bonds of the rare-earth and ligand ions in comparison with those of the ZrF₄-based glass. Decay curves of the emission from the ⁴F_5/2, ⁴F_7/2, ⁴S_3/2, and ⁴F_9/2 levels were measured. From the lifetime data and the radiative transition probabilities calculated using the Judd-Ofelt intensity parameters, multiphonon relaxation rates are estimated for the four excited levels. The multiphonon relaxation rates of the ⁴F_5/2, ⁴F_7/2, and ⁴F_9/2 were much smaller than those in the ZrF₄- based and Ga₂S₃-based glasses. This is the consequence of the extremely low-phonon-energy property of the ZnCl₂-based glass. The multiphonon relaxation rates were inversely proportional to the exponential of the energy gap between the emission and the next-lower levels (a so- called `energy-gap low') as well as the other glass systems.

Citation Download Citation

Masanori Shojiya, Kohei Kadono, Masahide Takahashi, Ryoji Kanno, and Yoji Kawamoto "Optical transition properties of rare-earth ions in nonfluoride halide glasses", Proc. SPIE 3280, Rare-Earth-Doped Devices II, (15 April 1998); https://doi.org/10.1117/12.305403

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