Measurement of the Q factor of semiconductor laser cavities by Fourier analysis of the emission spectrum

Daniel Hofstetter; Robert L. Thornton

doi:10.1117/12.307593

4 May 1998 Measurement of the Q factor of semiconductor laser cavities by Fourier analysis of the emission spectrum

Proceedings Volume 3285, Fabrication, Testing, Reliability, and Applications of Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.307593
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

We present a study on a novel method for the determination of the quality factor and the cavity loss in semiconductor lasers. The method we use involves Fourier analysis of the Fabry-Perot mode spectrum when operating the device below lasing threshold. The observation of the decay rate of higher order harmonics in the Fourier analysis of the spectra allows us to determine the amount of cavity propagation loss/gain. As an illustrative example, a Fourier analysis on experimental data for lasers fabricated in the AlGaAs material system will be given. In addition to the measurements on propagation loss/gain, this method allowed also the identification of the density and strength of intra-cavity scattering centers in optically pumped AlGaInN lasers. This is an important capability for the fabrication of blue diode lasers in the gallium-nitride material system.

Citation Download Citation

Daniel Hofstetter and Robert L. Thornton "Measurement of the Q factor of semiconductor laser cavities by Fourier analysis of the emission spectrum", Proc. SPIE 3285, Fabrication, Testing, Reliability, and Applications of Semiconductor Lasers III, (4 May 1998); https://doi.org/10.1117/12.307593

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