Specific defect density: a new approach for defect reduction

Venkat R. Nagaswami; Jos van Gessel; Dries van Wezep

doi:10.1117/12.308740

8 June 1998 Specific defect density: a new approach for defect reduction

Venkat R. Nagaswami, Jos van Gessel, Dries van Wezep

Proceedings Volume 3332, Metrology, Inspection, and Process Control for Microlithography XII; (1998) https://doi.org/10.1117/12.308740
Event: 23rd Annual International Symposium on Microlithography, 1998, Santa Clara, CA, United States

Abstract

Defect monitoring has become an integral part of semiconductor manufacturing process equivalent to metrology operations such as Critical Dimension measurement and Overlay. The process control on defectivity data has not received the same acceptance as other metrology parameters since the measured defect density can not be easily attributed to a specific equipment. In this work, the problems associated with SPC of defectivity data will be discussed in detail. A parameter known as Specific Defect Density has been defined which can be applied in an automatic mode to shut down an equipment which generates yield limiting defects.

Citation Download Citation

Venkat R. Nagaswami, Jos van Gessel, and Dries van Wezep "Specific defect density: a new approach for defect reduction", Proc. SPIE 3332, Metrology, Inspection, and Process Control for Microlithography XII, (8 June 1998); https://doi.org/10.1117/12.308740

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