Paper
20 April 1998 Interface roughness and confined LO phonon modes in (ZnSe)2 (ZnS)11/GaAs(100) superlattices grown by PAVPE
V. V. Tishchenko, Y. S. Raptis, Evangelos Anastassakis
Author Affiliations +
Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306240
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine
Abstract
Raman scattering spectra have been measured in (ZnSe)2 (ZnS)11 superlattices (SLs) grown by the photo-assisted vapor phase epitaxy technique. Spectral reveal effects from interface disordering. The magnitude of this disorder was estimated from the observed confinement of the B2 symmetry LO phonon modes in different SL areas with unequal thickness for the ZnSe quantum wells, and was found equal to one monolayer. It has been shown that such estimates are more accurate when based on spectra obtained below resonance.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
V. V. Tishchenko, Y. S. Raptis, and Evangelos Anastassakis "Interface roughness and confined LO phonon modes in (ZnSe)2 (ZnS)11/GaAs(100) superlattices grown by PAVPE", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); https://doi.org/10.1117/12.306240
Lens.org Logo
CITATIONS
Cited by 2 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Phonons

Laser sintering

Zinc

Quantum wells

Raman spectroscopy

Interfaces

Stereolithography

Back to Top