Raman spectra and effects of electrical field and stress in DQW AlGaAs lasers

A. Je. Semjonow

doi:10.1117/12.306236

20 April 1998 Raman spectra and effects of electrical field and stress in DQW AlGaAs lasers

A. Je. Semjonow

Proceedings Volume 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997; (1998) https://doi.org/10.1117/12.306236
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1997, Kiev, Ukraine

Abstract

Optical phonon Raman lines (TO-GaAs-like and TO,LO-AlAs- like) are shifted to lower energies and are asymmetrically broadened in electrical field compared with that of AlGaAs without field. Simultaneously are increased the intensities of all (optical and acoustical) Raman lines in electrical field. These increasings are different for different `components' of the optical phonons lines. The most significant amplification of intensities (about 3-times) is observed for the lines which correspond to the layers with Al-concentration x equals 0.3. These experimental results on intensity increasing in electrical field can be described by phonon Cherencov-effect for optical and acoustical phonons. We discuss also the low frequency tail intensity increasing and stress effects and the nature of the second temperature maximum (not at the center of the emitter).

Citation Download Citation

A. Je. Semjonow "Raman spectra and effects of electrical field and stress in DQW AlGaAs lasers", Proc. SPIE 3359, Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997, (20 April 1998); https://doi.org/10.1117/12.306236

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