New Technique For Inspecting Charge-Coupled Device (CCD) Wafers For Defects

Toshio Konishi; Morio Misono; Toshio Kato

doi:10.1117/12.933620

22 November 1982 New Technique For Inspecting Charge-Coupled Device (CCD) Wafers For Defects

Toshio Konishi, Morio Misono, Toshio Kato

Proceedings Volume 0336, Robot Vision; (1982) https://doi.org/10.1117/12.933620
Event: 1982 Technical Symposium East, 1982, Arlington, United States

Abstract

A new technique for inspecting extremely hign density CCU wafers (292 x 492 picture elements) for surface defects is proposed. The differential operator and the thresholding are employed to extract pattern boundary with a high. S/N ratio, after which a set of the pixels in a pattern area compared with the corresponding set of pixels in the adjacent repeating pattern. The defect is identified as the number of unmatching pixels by the above processing, adding the reduction technique for associated noise of the boundary. The practical system including the hardware logic of those processing ones it possible to inspect a 3-inch CCD wafer in 80 minutes.

Citation Download Citation

Toshio Konishi, Morio Misono, and Toshio Kato "New Technique For Inspecting Charge-Coupled Device (CCD) Wafers For Defects", Proc. SPIE 0336, Robot Vision, (22 November 1982); https://doi.org/10.1117/12.933620

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