Paper
26 May 1998 Laser-stimulated modification of the structure of silicon layers produced with the LCVD method
A. E. Dar'yushkin, S. B. Korovin, Vladimir I. Pustovoy
Author Affiliations +
Proceedings Volume 3404, ALT'97 International Conference on Laser Surface Processing; (1998) https://doi.org/10.1117/12.308624
Event: ALT '97 International Conference on Laser Surface Processing, 1997, Limoges, France
Abstract
Based on the measured spectra of Raman scattering, we obtained the data concerning the modification of the microstructure of silicon film synthesized with the use of the LCVD (laser chemical vapor deposition) method on amorphous glass substrate. Appearance of a polycrystalline phase of silicon was observed when the initial amorphous film was irradiated with high-power light pulses of a CO2 laser. Time resolved reflection spectra were measured for irradiating silicon films in situ. Was observed the polycrystalline film formation, moreover, films melting was not founded.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
A. E. Dar'yushkin, S. B. Korovin, and Vladimir I. Pustovoy "Laser-stimulated modification of the structure of silicon layers produced with the LCVD method", Proc. SPIE 3404, ALT'97 International Conference on Laser Surface Processing, (26 May 1998); https://doi.org/10.1117/12.308624
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KEYWORDS
Silicon

Silicon films

Semiconductor lasers

Carbon dioxide lasers

Crystals

Chemical vapor deposition

Semiconductors

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