Monolithic two-color detector for short- and middle-wavelength IR using p-HgCdTe/N-HgCdTe/CdTe/GaAs

Seung-Man Park; Jae Mook Kim; Jong-Hyeong Song; Sang-Hee Suh

doi:10.1117/12.327989

26 October 1998 Monolithic two-color detector for short- and middle-wavelength IR using p-HgCdTe/N-HgCdTe/CdTe/GaAs

Seung-Man Park, Jae Mook Kim, Jong-Hyeong Song, Sang-Hee Suh

Proceedings Volume 3436, Infrared Technology and Applications XXIV; (1998) https://doi.org/10.1117/12.327989
Event: SPIE's International Symposium on Optical Science, Engineering, and Instrumentation, 1998, San Diego, CA, United States

Abstract

A new device concept and implementation procedure of a monolithic two-color IR detector using MOVPE grown p-HgCdTe/N- HgCdTe/CdTe/GaAs is discussed. Newly introduced two-color IR detector consists of simple n-p-N structure, which can be realized using simple p-N double layer HgCdTe material. Formation of potential barrier in the conduction band of p-N heterojunction is a key to the successful operation of monolithic two-color IR detector. It prevents photogenerated minority carriers in small band gap region (p-HgCdTe) from diffusing to N-HgCdTe. The monolithic two-color IR detector was firstly fabricated using MOVPE grown p-Hg_0.69Cd_0.31Te/N-Hg_0.64Cd_0.36Te/CdTe/GaAs for SW/MWIR. SWIR diode shows R_oA value of 752 (Omega) cm², while MWIR diode shows R_oA value of 140 (Omega) cm².

Citation Download Citation

Seung-Man Park, Jae Mook Kim, Jong-Hyeong Song, and Sang-Hee Suh "Monolithic two-color detector for short- and middle-wavelength IR using p-HgCdTe/N-HgCdTe/CdTe/GaAs", Proc. SPIE 3436, Infrared Technology and Applications XXIV, (26 October 1998); https://doi.org/10.1117/12.327989

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