Paper
22 May 1998 Optimization of InGaAs MQW modulator structures operating with 5 V or less modulation
Declan Byrne, Paul G. Horan, John Hegarty
Author Affiliations +
Proceedings Volume 3490, Optics in Computing '98; (1998) https://doi.org/10.1117/12.308972
Event: Optics in Computing '98, 1998, Bruges, Belgium
Abstract
Optimum structures for an InGaAs MQW pin diode modulator operating at low voltage (< equals 5V) are explored where the criterion is maximum reflectivity change.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Declan Byrne, Paul G. Horan, and John Hegarty "Optimization of InGaAs MQW modulator structures operating with 5 V or less modulation", Proc. SPIE 3490, Optics in Computing '98, (22 May 1998); https://doi.org/10.1117/12.308972
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Cited by 7 scholarly publications.
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KEYWORDS
Reflectivity

Mirrors

Absorption

Modulators

Modulation

Indium gallium arsenide

Optical resonators

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