Ultrathin film fully depleted CMOS/SIMOX technology with selective CVD tungsten and its application to LSIs

Yasuhiro Sato; Toshihiko Kosugi; Hiromu Ishii

doi:10.1117/12.323974

4 September 1998 Ultrathin film fully depleted CMOS/SIMOX technology with selective CVD tungsten and its application to LSIs

Yasuhiro Sato, Toshihiko Kosugi, Hiromu Ishii

Author Affiliations +

Proceedings Volume 3506, Microelectronic Device Technology II; (1998) https://doi.org/10.1117/12.323974
Event: Microelectronic Manufacturing, 1998, Santa Clara, CA, United States

Abstract

Selective W-CVD technology with hydrogenation and hydrogen- termination treatment was developed to reduce source/drain sheet resistance in ultra-thin-film fully-depleted CMOSFET's/SIMOX, and it was applied to 0.25-micrometer-gate gate-array LSIs. It is clarified that this technology ensures single-contact cells, which are vital for higher packing density, with no degradation of device characteristics, circuit performance, and LSI yield. Moreover, recent results for devices with a W-covered gate/source/drain are presented.

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Yasuhiro Sato, Toshihiko Kosugi, and Hiromu Ishii "Ultrathin film fully depleted CMOS/SIMOX technology with selective CVD tungsten and its application to LSIs", Proc. SPIE 3506, Microelectronic Device Technology II, (4 September 1998); https://doi.org/10.1117/12.323974

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