Paper
3 September 1998 Fast-ramp rapid vertical processor for 300-mm Si wafer processing
Cole Porter, Allan Laser, Robert Herring, Pradeep Pandey
Author Affiliations +
Abstract
Fast-ramp vertical furnace technology has been established on the 200-nm wafer platform providing higher capacity production, decreased cycle time and lower thermal budgets. Fast-ramp furnaces are capable of instantaneous temperature ramp rates up to 100 degrees C/min. This fast-ramp technology is now applied to 300-nm wafer processing on the SVG/Thermco Rapid Vertical Processor Vertical Furnace. 300- mm fast-ramp capability using the latest in real-time adaptive model based temperature control technology, Clairvoyant Control, is reported. Atmospheric Thermal Oxidation, LPCVD Nitride and Polysilicon Deposition, and LPCVD TEOS-based SiO2 Deposition results are discussed. 300- mm wafer Radial Delta Temperature dependence on temperature ramp rate, wafer pitch, and wafer support fixtures are discussed. Wafer throughput is calculated and reported. The Clairvoyant Control methodology of combining thermal, direct and virtually-sensed parameters to produce real-tim e estimation of wafer temperatures, thermal trajectory optimization, and feedback to minimize variations in film thickness and electrical properties is presented.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cole Porter, Allan Laser, Robert Herring, and Pradeep Pandey "Fast-ramp rapid vertical processor for 300-mm Si wafer processing", Proc. SPIE 3507, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing IV, (3 September 1998); https://doi.org/10.1117/12.324342
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Cited by 2 patents.
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KEYWORDS
Semiconducting wafers

Silicon

Low pressure chemical vapor deposition

Silica

Thermal oxidation

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