Polyimide defect reduction

Shih-Shiung Chen; Hung-Chih Chen; Chen-Cheng Kuoe

doi:10.1117/12.324355

3 September 1998 Polyimide defect reduction

Shih-Shiung Chen, Hung-Chih Chen, Chen-Cheng Kuoe

Proceedings Volume 3507, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing IV; (1998) https://doi.org/10.1117/12.324355
Event: Microelectronic Manufacturing, 1998, Santa Clara, CA, United States

Abstract

The application of polyimide materials on ICs processes are widely accepted. They can be applied as passivation layer, alpha particle barrier, stress buffer and interlayer dielectric, etc. The polyimide materials presented in this article is a negative tone, photosensitive type I-line/G- line compatible polyimide. It is spin-coated onto passivation-etched wafers to form a thick stress buffer with initial thickness 9.5 micrometers after coated and final thickness around 5.0 micrometers after cured. The bonding pad is defined with reversed tone mask compare to passivation mask through exposure and development. In this article, the mechanisms of two types of polyimide defect formation are resolved. One is polyimide residue formed through atomization during rinsing and the other is polyimide bubble take place through chemical reaction of moisture with silicon coupler after coated.

Citation Download Citation

Shih-Shiung Chen, Hung-Chih Chen, and Chen-Cheng Kuoe "Polyimide defect reduction", Proc. SPIE 3507, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing IV, (3 September 1998); https://doi.org/10.1117/12.324355

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