Monolithically integrated InGaAsP/InP laser/modulator using identical layer approach for opto-electronic oscillator

Chi Wu; Sam A. Keo; X. Steve Yao; Tasha E. Turner; Lawrence J. Davis; Martin G. Young; Lute Maleki; Siamak Forouhar

doi:10.1117/12.319632

19 August 1998 Monolithically integrated InGaAsP/InP laser/modulator using identical layer approach for opto-electronic oscillator

Chi Wu, Sam A. Keo, X. Steve Yao, Tasha E. Turner, Lawrence J. Davis, Martin G. Young, Lute Maleki, Siamak Forouhar

Author Affiliations +

Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319632
Event: Photonics China '98, 1998, Beijing, China

Abstract

The microwave optoelectronic oscillator (OEO) has been demonstrated on a breadboard. The future trend is to integrate the whole OEO on a chip, which requires the development of high power and high efficiency integrated photonic components. In this paper, we will present the design and fabrication of an integrated semiconductor laser/modulator using the identical active layer approach on InGaAsP/InP material. The best devices have threshold currents of 50-mA at room temperature for CW operation. The device length is approximately 3-mm, resulting in a mode spacing of 14 GHz. For only 5-dBm microwave power applied to the modulator section, modulation response with 30 dB resonate enhancement has been observed. This work shows the promise for an on-chip integrated OEO.

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Chi Wu, Sam A. Keo, X. Steve Yao, Tasha E. Turner, Lawrence J. Davis, Martin G. Young, Lute Maleki, and Siamak Forouhar "Monolithically integrated InGaAsP/InP laser/modulator using identical layer approach for opto-electronic oscillator", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); https://doi.org/10.1117/12.319632

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