Paper
19 August 1998 Operating characteristics of InGaAsP/GaAs SCH SQW high-power lasers by LPE
Xin Gao, Baoxue Bo, Yi Qu, Baoshun Zhang, Yuxia Wang, Ling Wang, Lixia Yang, Xiaowei Song, Xingde Zhang
Author Affiliations +
Proceedings Volume 3547, Semiconductor Lasers III; (1998) https://doi.org/10.1117/12.319600
Event: Photonics China '98, 1998, Beijing, China
Abstract
A detailed operating characteristics of InGaAsP/GaAs separate confinement heterostructure single-quantum-well wide-stripe lasers emitting at 808 nm grown by liquid phase epitaxy is reported. The temperature dependences of the lasing wavelength (lambda) , the threshold current density Jth and differential quantum efficiency (eta) d are studied. The effects of the cavity length L on the threshold current density Jth and the differential quantum efficiency (eta) d are studied. The threshold current density Jth increases with increasing temperature T. But the increase of Jth with temperature T is slightly deviated from the exponential dependence. The data fitting of Jth with between 10 degree(s)C and 40 degree(s)C demonstrates a record characteristic temperature T0 of 218 K, indicating a minor influence of temperature on Jth.
© (1998) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xin Gao, Baoxue Bo, Yi Qu, Baoshun Zhang, Yuxia Wang, Ling Wang, Lixia Yang, Xiaowei Song, and Xingde Zhang "Operating characteristics of InGaAsP/GaAs SCH SQW high-power lasers by LPE", Proc. SPIE 3547, Semiconductor Lasers III, (19 August 1998); https://doi.org/10.1117/12.319600
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconductor lasers

Liquid phase epitaxy

Quantum efficiency

High power lasers

Waveguides

Heterojunctions

Temperature metrology

Back to Top