Femtosecond transient transmission studies of GaAs thin film

Feipeng Pi

doi:10.1117/12.318244

14 August 1998 Femtosecond transient transmission studies of GaAs thin film

Feipeng Pi

Proceedings Volume 3556, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications II; (1998) https://doi.org/10.1117/12.318244
Event: Photonics China '98, 1998, Beijing, China

Abstract

Femtosecond transient transmission measurements are used to investigate the scattering and relaxation dynamics of nonequilibrium carriers in GaAs thin film. With a nonequilibrium energy-balance model, the cooling process of hot carriers via emission of phonons is simulated. It is found that, the fitting parameter (lambda) is close to the Frohlich constant (alpha) _F qualitatively and decreases with increasing excited carrier density. It reveals that the carrier-LO phonon coupling is the main way of the cooling of hot carriers and the coupling will be weaken by the nonequilibrium phonon effect.

Citation Download Citation

Feipeng Pi "Femtosecond transient transmission studies of GaAs thin film", Proc. SPIE 3556, Electro-Optic and Second Harmonic Generation Materials, Devices, and Applications II, (14 August 1998); https://doi.org/10.1117/12.318244

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