Imaging technology based on As38S62 thin layers

Alexander V. Stronski; Miroslav Vlcek; A. Sklenar

doi:10.1117/12.324551

19 August 1998 Imaging technology based on As₃₈S₆₂ thin layers

Alexander V. Stronski, Miroslav Vlcek, A. Sklenar

Author Affiliations +

Proceedings Volume 3573, OPTIKA '98: 5th Congress on Modern Optics; (1998) https://doi.org/10.1117/12.324551
Event: OPTIKA '98: Fifth Congress on Modern Optics, 1998, Budapest, Hungary

Abstract

The present paper is concerned with an investigation of the image formation properties of As₃₈S₆₂ thin layers and their application in the surface relief formation. The spectral dependence of the index of refraction n of variously treated samples (virgin, exposed, annealed) was obtained from optical transmission in the spectral region 0.4 - 2.5 micrometers . The energy dependencies of n for variously treated samples were well fitted by the Wemple-DiDomenico dispersion relationship and were used for the estimation of the single-oscillator model parameters. It was found, that exposure as well as annealing causes an increase in refractive index n values over the all spectral region. The values of optical dielectric constant (epsilon) is also increasing. Changes of the single-oscillator model parameters induced by exposure and/or by annealing are discussed on the basis of photo- and thermally induced structural changes, which were directly confirmed by Raman spectroscopy. Such photostructural changes provide good etching selectivity of As₃₂S₆₂ layers in amine based etching solutions. This provided possibility for the fabrication of surface-relief patterns, in particular, diffraction gratings. The results obtained, show that As₃₈S₆₂ inorganic resists can be successfully used in holography and other optical applications.19

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Alexander V. Stronski, Miroslav Vlcek, and A. Sklenar "Imaging technology based on As₃₈S₆₂ thin layers", Proc. SPIE 3573, OPTIKA '98: 5th Congress on Modern Optics, (19 August 1998); https://doi.org/10.1117/12.324551

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