Preparation and characterization of Er-doped SiO2-TiO2-Al2O3 planar waveguides by sol-gel process for integrated optical amplifiers

Qing Xiang; Yan Zhou; Yee Loy Lam; Yuen Chuen Chan; Chan Hin Kam

doi:10.1117/12.344500

1 April 1999 Preparation and characterization of Er-doped SiO2-TiO2-Al2O3 planar waveguides by sol-gel process for integrated optical amplifiers

Qing Xiang, Yan Zhou, Yee Loy Lam, Yuen Chuen Chan, Chan Hin Kam

Author Affiliations +

Proceedings Volume 3622, Rare-Earth-Doped Materials and Devices III; (1999) https://doi.org/10.1117/12.344500
Event: Optoelectronics '99 - Integrated Optoelectronic Devices, 1999, San Jose, CA, United States

Abstract

Silica based planar waveguides co-doped with Er³⁺, TiO₂ and Al₂O₃ have been fabricated on SOS (silica on silicon) by a sol-gel process using multiple spin-coating and rapid thermal processing (RTP). Their characteristics, such as refractive index, thickness photoluminescence (PL), FTIR (Furior Transform infrared spectrum), XRD (X-ray diffraction), and surface roughness are investigated. The relatively strong PL emitted from planar waveguide has been got using the recipe of 93SiO₂:7TiO₂:10Al₂O₃:0.5Er₂O₃ (mole ratio). The presence of O₂ during annealing in RTP is indispensable for sol-gel waveguide to guide light. Both the average refractive index and thickness of multilayer film increase as the layer number increases.

Citation Download Citation

Qing Xiang, Yan Zhou, Yee Loy Lam, Yuen Chuen Chan, and Chan Hin Kam "Preparation and characterization of Er-doped SiO2-TiO2-Al2O3 planar waveguides by sol-gel process for integrated optical amplifiers", Proc. SPIE 3622, Rare-Earth-Doped Materials and Devices III, (1 April 1999); https://doi.org/10.1117/12.344500

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