Antireflective coating strategies for 193-nm lithography

Alan Stephen; Kim R. Dean; Jeff D. Byers

doi:10.1117/12.350184

11 June 1999 Antireflective coating strategies for 193-nm lithography

Alan Stephen, Kim R. Dean, Jeff D. Byers

Proceedings Volume 3678, Advances in Resist Technology and Processing XVI; (1999) https://doi.org/10.1117/12.350184
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

The need for antireflective layers for good lithographic performance is a necessity for 193 nm wavelength exposures. In this paper we will illustrate two solutions for reflectivity control. The first is a spin-on organic bottom antireflectivity coating optimized for 193nm resist and the other is an inorganic film, SiOxNy.

Citation Download Citation

Alan Stephen, Kim R. Dean, and Jeff D. Byers "Antireflective coating strategies for 193-nm lithography", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350184

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