Reactive ion etch studies of DUV resists

Ranee W. Kwong; Wayne M. Moreau; Wendy Yan

doi:10.1117/12.350172

11 June 1999 Reactive ion etch studies of DUV resists

Ranee W. Kwong, Wayne M. Moreau, Wendy Yan

Proceedings Volume 3678, Advances in Resist Technology and Processing XVI; (1999) https://doi.org/10.1117/12.350172
Event: Microlithography '99, 1999, Santa Clara, CA, United States

Abstract

The morphology and degradation of the polymeric DUV resist of polyhydroxystyrene/t-butyl acrylate copolymers after CF₄/O₂/Ar/CHF₃ reactive ion etching (RIE) was studied. The surface pitting in the area of 10 nm with spikes as large as 85 nm were found. DUV resists with higher t-butylacrylate content in the main chain were susceptible to main chain scission and surface pitting. The entrapment of volatile fragments by the deposited amorphous fluorocarbon polymer during the RIE process leads to surface distortions. Pre-hardening of the resist by electron beam reduces the surface pitting by two fold. Negative resist based on polyhydroxystyrene homopolymer with minimum volatile produced very smooth films with a tenfold reduction in roughness factor. The future design of positive resist should include the RIE performance factor of minimal outgassing and minimum sidewall surface roughness.

Citation Download Citation

Ranee W. Kwong, Wayne M. Moreau, and Wendy Yan "Reactive ion etch studies of DUV resists", Proc. SPIE 3678, Advances in Resist Technology and Processing XVI, (11 June 1999); https://doi.org/10.1117/12.350172

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