Effect of stress exerted by Si3N4 and SiO2 insulation layers on donor generation in surface layer of Czochralski-grown silicon

Wojciech Jung; Andrzej Misiuk; Jadwiga Bak-Misiuk; Marek Rozental

doi:10.1117/12.344738

8 April 1999 Effect of stress exerted by Si₃N₄ and SiO₂ insulation layers on donor generation in surface layer of Czochralski-grown silicon

Wojciech Jung, Andrzej Misiuk, Jadwiga Bak-Misiuk, Marek Rozental

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Proceedings Volume 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (1999) https://doi.org/10.1117/12.344738
Event: International Conference on Solid State Crystals '98, 1998, Zakopane, Poland

Abstract

Effect of stress related to presence of surface insulation layer (silicon nitride and oxide films deposited on silicon surface) on carrier concentration in Czochralski grown silicon (Cz-Si) annealed at 450 - 600 degree(s)C for up to 50 hours were investigated. The SiO₂ film of about 120 nm thickness exerted tensile ((sigma) approximately equals 3.5(DOT)10⁸ Pa) and the Si₃N₄ of about 290 nm thickness compressive ((sigma) approximately equals 3.5(DOT)10⁸ Pa) stress on the Si matrix. The difference in electron concentration (Delta) N, was detected in the samples with Si₃N₄ layers after annealing at 450/600 degree(s)C in comparison to that in the samples subjected to the same treatment but without insulation film. The (Delta) N value was dependent on the initial oxygen concentration, type of conductivity and thermal history of the samples. The observed effect was analyzed accounting for the doping redistribution in the surface layer of Cz-Si during films growth. This effect can be explained in part by assuming that the rate of thermal donor generation is enlarged under compressive stress as is in the case of hydrostatic stress produced by ambient argon atmosphere during annealing. The difference in electron concentration (Delta) N, detected in the samples with SiO₂ layers after annealing at 450/600 degree(s)C, was much less pronounced in comparison to the Si₃N₄ layers and even less than for samples without insulation layer. This effect can be explained in part by assuming that the rate of thermal donor generation is reduced under tensile stress.

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Wojciech Jung, Andrzej Misiuk, Jadwiga Bak-Misiuk, and Marek Rozental "Effect of stress exerted by Si₃N₄ and SiO₂ insulation layers on donor generation in surface layer of Czochralski-grown silicon", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); https://doi.org/10.1117/12.344738

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