Magnetron sputter epitaxy of n+-InSb on p-InSb for infrared photodiode applications

Waldemar Gawron; Krzysztof Adamiec; Waldemar Larkowski

doi:10.1117/12.344749

8 April 1999 Magnetron sputter epitaxy of n⁺-InSb on p-InSb for infrared photodiode applications

Waldemar Gawron, Krzysztof Adamiec, Waldemar Larkowski

Proceedings Volume 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology; (1999) https://doi.org/10.1117/12.344749
Event: International Conference on Solid State Crystals '98, 1998, Zakopane, Poland

Abstract

Narrow gap intrinsic semiconductors, extrinsic semiconductors and low dimensional structures have been used for infrared applications. Here we propose indium antimonide for infrared photodetectors operating in the 3 - 5 micrometers wavelength range at 80 K. These high performance single or multi-element detectors are typically fabricated from bulk InSb, using processes in involving the diffusion of dopants to product the p⁺-n homojunctions. We present a new growth technique, RF magnetron sputter epitaxy, where indium and antimony are supplied from solid n-InSb sputter target. Using this technique we have deposited n⁺-type epilayers on p-type bulk InSb A 1 - 2 micrometers n⁺ InSb layer grown on p InSb at a growth temperature of 350 - 370 degree(s)C. The layers show excellent surface morphology and crystallinity. We have used these epilayers to fabricate homojunction infrared photodiodes. The spectral and I-V characteristics of this diode have been presented and compared with the more widely reported metallurgical diffused junctions. This is the first material quality obtained for InSb nucleated directly onto InSb by rf magnetron sputter epitaxy simultaneously formatting np junction reported to date.

Citation Download Citation

Waldemar Gawron, Krzysztof Adamiec, and Waldemar Larkowski "Magnetron sputter epitaxy of n⁺-InSb on p-InSb for infrared photodiode applications", Proc. SPIE 3725, International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology, (8 April 1999); https://doi.org/10.1117/12.344749

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available