Nucleation and growth of diamond by laser ablation

Wanlu Wang; Kejun Liao; Biben Wang; Jinlong Xiao

doi:10.1117/12.361088

8 September 1999 Nucleation and growth of diamond by laser ablation

Wanlu Wang, Kejun Liao, Biben Wang, Jinlong Xiao

Proceedings Volume 3862, 1999 International Conference on Industrial Lasers; (1999) https://doi.org/10.1117/12.361088
Event: International Symposium on Industrial Lasers, 1999, Wuhan, China

Abstract

The nucleation and growth of diamond by laser ablation were investigated by scanning electron microscopy and Raman spectrum. The laser deposition parameters have a significant effect on the quality of diamond. High quality of diamond can be achieved by laser deposition with the wavelength of 193 nm, whereas only amorphous carbon higher than 193 nm. Experimental evidences showed that a negative bias voltage relative to the target was applied to substrate, greatly led to nucleation enhancement by ion bombardment. In addition, the stress-induced phase transformation from non-diamond to diamond was occurred by ion bombardment during the nucleation process.

Citation Download Citation

Wanlu Wang, Kejun Liao, Biben Wang, and Jinlong Xiao "Nucleation and growth of diamond by laser ablation", Proc. SPIE 3862, 1999 International Conference on Industrial Lasers, (8 September 1999); https://doi.org/10.1117/12.361088

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