Industrial large-aperture XeCl laser for surface processing

Tommaso Letardi; Alessandro Baldesi; Sarah Bollanti; Francesca Bonfigli; Paolo Di Lazzaro; Francesco Flora; Gualtiero Giordano; Alessandro Marinai; Daniele Murra; Giovanni Schina; Cheng En Zheng

doi:10.1117/12.377068

7 February 2000 Industrial large-aperture XeCl laser for surface processing

Tommaso Letardi, Alessandro Baldesi, Sarah Bollanti, Francesca Bonfigli, Paolo Di Lazzaro, Francesco Flora, Gualtiero Giordano, Alessandro Marinai, Daniele Murra, Giovanni Schina, Cheng En Zheng

Author Affiliations +

Proceedings Volume 3888, High-Power Lasers in Manufacturing; (2000) https://doi.org/10.1117/12.377068
Event: Advanced High-Power Lasers and Applications, 1999, Osaka, Japan

Abstract

In the frame of a large project on new materials technologies for photovoltaic and microelectronic applications (FOTO), the process of amorphous silicon (a-Si) transformation into polycrystalline silicon (poly-Si) by means of laser irradiation has been tested with a long-pulse (160 ns), 8 J/p XeCl source. Following the positive results, a laser source, having design parameters of 10 J/p, 120 ns, 10 Hz, has been designed and built, with the aim of realizing a laboratory line for the production of thin film transistors (TFTs) devices.

Citation Download Citation

Tommaso Letardi, Alessandro Baldesi, Sarah Bollanti, Francesca Bonfigli, Paolo Di Lazzaro, Francesco Flora, Gualtiero Giordano, Alessandro Marinai, Daniele Murra, Giovanni Schina, and Cheng En Zheng "Industrial large-aperture XeCl laser for surface processing", Proc. SPIE 3888, High-Power Lasers in Manufacturing, (7 February 2000); https://doi.org/10.1117/12.377068

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