267-W cw AlGaAs/GaInAs diode laser bars

Juergen Braunstein; Michael Mikulla; Rudolf Kiefer; Martin Walther; Juergen Jandeleit; Wolfgang Brandenburg; Peter Loosen; Reinhart Poprawe; Guenter Weimann

doi:10.1117/12.380551

29 March 2000 267-W cw AlGaAs/GaInAs diode laser bars

Juergen Braunstein, Michael Mikulla, Rudolf Kiefer, Martin Walther, Juergen Jandeleit, Wolfgang Brandenburg, Peter Loosen, Reinhart Poprawe, Guenter Weimann

Author Affiliations +

Proceedings Volume 3945, Laser Diodes and LEDs in Industrial, Measurement, Imaging, and Sensors Applications II; Testing, Packaging, and Reliability of Semiconductor Lasers V; (2000) https://doi.org/10.1117/12.380551
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

High-power 980 nm-diode laser bars have been fabricated in the AlGaAs/GaInAs material system. The bars are 1 cm wide and comprise 25 broad area lasers with 200 micrometer aperture and 2 mm resonator length. Hence, the fill factor is 50%. To reduce the power density at the facet, we used an LOC structure with low modal gain, which also helps to prevent filamentation. The measured threshold current was 14 A and a record output power of 267 W cw was achieved at 333 A with an electro-optical conversion efficiency of 40%. With less thermal load, at 150 W output power the conversion efficiency was as high as 50% and the corresponding slope efficiency was 0.9 W/A. Microchannel copper heat sinks with a thermal resistance of less than 0.29 K/W were used for mounting the bars. The coolant temperature was set for all measurements to 22 degrees Celsius and the flux was 0.9 l/min. Additionally, the top electrode of the p-side down mounted bars was cooled by a second heat sink, which was pressed gently on the top electrode.

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Juergen Braunstein, Michael Mikulla, Rudolf Kiefer, Martin Walther, Juergen Jandeleit, Wolfgang Brandenburg, Peter Loosen, Reinhart Poprawe, and Guenter Weimann "267-W cw AlGaAs/GaInAs diode laser bars", Proc. SPIE 3945, Laser Diodes and LEDs in Industrial, Measurement, Imaging, and Sensors Applications II; Testing, Packaging, and Reliability of Semiconductor Lasers V, (29 March 2000); https://doi.org/10.1117/12.380551

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