Paper
23 June 2000 Environmental stability of chemically amplified resists: proposing an industry standard methodology for testing
Kim R. Dean, Oleg P. Kishkovich
Author Affiliations +
Abstract
The authors propose the establishment of a new industry standard methodology for testing the environmental stability of chemically amplified chemical resists. Preparatory to making this proposal, they developed a pertinent test apparatus and test procedure that might be used uniformly as an industry-wide best practice. To demonstrate and validate their proposed methodology, the authors subjected two different 193 nm chemically amplified photoresists to test conditions in the 'torture chamber,' simulating actual lithographic environmental scenarios. Depending on the variables of each test run (e.g., different resists, different resist thicknesses, different pollutants, different concentrations, and different humidity levels), a variety of defects were noted and described quantitatively. Of the three contaminants tested, ammonia had the strongest effect. The thin resists were more strongly affected by the contamination.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kim R. Dean and Oleg P. Kishkovich "Environmental stability of chemically amplified resists: proposing an industry standard methodology for testing", Proc. SPIE 3999, Advances in Resist Technology and Processing XVII, (23 June 2000); https://doi.org/10.1117/12.388295
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CITATIONS
Cited by 2 scholarly publications.
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KEYWORDS
Semiconducting wafers

Humidity

Contamination

Cadmium

Wafer testing

Chemically amplified resists

Critical dimension metrology

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