Photothermal measurements of Al+- and Al+/N+- implanted 6H-SiC

Joerg Pezoldt; Gerd Teichert; Dieter Panknin; Matthias Voelskow

doi:10.1117/12.375440

25 January 2000 Photothermal measurements of Al⁺- and Al⁺/N⁺- implanted 6H-SiC

Joerg Pezoldt, Gerd Teichert, Dieter Panknin, Matthias Voelskow

Proceedings Volume 4064, Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering; (2000) https://doi.org/10.1117/12.375440
Event: Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, 1999, St. Petersburg, Russian Federation

Abstract

Thermal wave measurements on 6H-SiC with a particular emphasis on Al⁺ and Al⁺/N⁺ implanted 6H-SiC was carried out. The 6H-SiC wafers were implanted at different substrate temperatures. The photothermal measurements of the conversion coefficient K and the reflectivity R show a strong dependence on the implantation temperature. This result is discussed in relation to Rutherford backscattering spectrometry/ion channeling measurements. The behavior of the reflectivity in dependence on the implantation conditions could be modelized by using a simple two layer optical model. The carried out investigations of the implanted SiC demonstrate, that photothermal methods are suitable for both research and on- line production use.

Citation Download Citation

Joerg Pezoldt, Gerd Teichert, Dieter Panknin, and Matthias Voelskow "Photothermal measurements of Al⁺- and Al⁺/N⁺- implanted 6H-SiC", Proc. SPIE 4064, Third International Workshop on Nondestructive Testing and Computer Simulations in Science and Engineering, (25 January 2000); https://doi.org/10.1117/12.375440

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